Field effect transistor having Schottky contact and a high frequ

Details Field effect transistor having Schottky contact and a high frequ Field effect transistor having Schottky contact and a high frequ

1991-07-18

1992-04-14

Carroll, J.

357 15, 357 54, 357 55, H01L 2948, H01L 2980, H01L 2906

Patent

active

051052423

ABSTRACT:
A compound semiconductor device in which a source and drain regions are formed on both sides of a groove defined in a substrate and both regions are separated from the side walls of the groove by predetermined intervals through a first region with a depth shallower than the groove. A second region is formed between the source and drain region with a depth deeper than said groove. A gate electrode is formed on the surface of the second region in the groove for Schottky contacting with the upper surface of the second region. There is further disclosed a method of making a fine mask pattern suitable for making the compound semiconductor mentioned above.

REFERENCES:
patent: 4196439 (1980-04-01), Niehaus et al.
patent: 4301188 (1981-11-01), Niehaus
patent: 4426656 (1984-01-01), DiLorenzo et al.
patent: 4811077 (1989-03-01), Fowler et al.
patent: 4888626 (1989-12-01), Davey
M. Tubb, Australian Official Action dated Jan. 4, 1990.

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