Field effect transistor having multiple gate electrodes surround

Details Field effect transistor having multiple gate electrodes surround Field effect transistor having multiple gate electrodes surround

1997-10-31

1998-09-08

Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257262, 257263, 257266, 257273, H01L 2980, H01L 31112

Patent

active

058048480

ABSTRACT:
A field effect transistor comprising source and drain regions, a channel region composed of a semiconductor layer formed between the source and drain regions and gate electrodes disposed to at least three surfaces surrounding the channel region. The structure can increase the number of carriers induced in the channel region and enhance the current driving performance and mutual conductance as compared with the single gate structure or double gate structure.

REFERENCES:
patent: 4254430 (1981-03-01), Beneking
patent: 4538165 (1985-08-01), Chang et al.
patent: 4609889 (1986-09-01), Kumar
patent: 4651180 (1987-03-01), Nishizawa et al.
patent: 4698654 (1987-10-01), Kohn
patent: 5012305 (1991-04-01), Khadder et al.
patent: 5084744 (1992-01-01), Hori et al.
patent: 5321289 (1994-06-01), Baba et al.
patent: 5497019 (1996-03-01), Mayer et al.

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