Field-effect transistor having group III nitride electrode...

Details Field-effect transistor having group III nitride electrode... Field-effect transistor having group III nitride electrode...

2011-07-05

2011-07-05

Fahmy, Wael M (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Light responsive structure

C257S183000, C257SE29127, C257SE29253

Reexamination Certificate

active

07973335

ABSTRACT:
A field plate portion (5) overhanging a drain side in a visored shape is formed in a gate electrode (2). A multilayered film including a SiN film (21) and a SiO2film (22) is formed beneath the field plate portion (5). The SiN film (21) is formed so that a surface of an AlGaN electron supply layer (13) is covered therewith.

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