Field effect transistor having channel with plural quantum boxes

Details Field effect transistor having channel with plural quantum boxes Field effect transistor having channel with plural quantum boxes

1996-07-18

1997-03-04

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 27, 257192, H01L 2906, H01L 310328, H01L 310336

Patent

active

056082312

ABSTRACT:
A field effect transistor has a quantum dot array in its channel region. The quantum dot array is composed of a plurality of quantum dots arranged adjacent to each other on a common plane. Each quantum dot may be made of heterojunction of compound semiconductors or junction of a semiconductor and an insulator. The field effect transistor has a differential negative resistance.

REFERENCES:
patent: 5032877 (1991-07-01), Bate
patent: 5198879 (1993-03-01), Ohshima

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