Field effect transistor having c-axis channel layer

Details Field effect transistor having c-axis channel layer Field effect transistor having c-axis channel layer

1992-12-14

1995-05-09

Saadat, Mahshid D.

Superconductor technology: apparatus, material, process

High temperature devices, systems, apparatus, com- ponents,...

Semiconductor thin film device or thin film electric...

257 35, 257 38, 257 39, 505234, 505235, 505237, 505239, 427 62, 427 63, H01B 1200, H01L 3922, B05D 512

Patent

active

054139821

ABSTRACT:
A superconducting device comprising a substrate having a principal surface, a non-superconducting oxide layer having a similar crystal structure to that of the oxide superconductor, an extremely thin superconducting channel formed of a c-axis oriented oxide superconductor thin film on the non-superconducting oxide layer, a superconducting source region and a superconducting drain region formed of an a-axis oriented oxide superconductor thin film at the both sides of the superconducting channel separated from each other, which are electrically connected each other by the superconducting channel, so that superconducting current can flow through the superconducting channel between the superconducting source region and the superconducting drain region, and a gate electrode of a material which includes silicon through a gate insulator on the superconducting channel for controlling the superconducting current flowing through the superconducting channel, in which the gate electrode is embedded between the superconducting source region and the superconducting drain region and is isolated from the superconducting source region and the superconducting drain region by an insulating region formed by diffused silicon from the gate electrode.

REFERENCES:
patent: 5087605 (1992-02-01), Hedge et al.
Eidelloth, W., et al., "Wet Etch Process for Patterning Insulators Suitable for Epitaxial High T.sub.c Superconducting Thin Film Multilevel Electronic Circuits", Applied Physics Letters, vol. 59, No. 10, pp. 1257-1259, Sep. 1991.
Wu et al., "High Critical Currents in Epitaxial YBaCuO Thin Films on Silicon with Buffer Layers," Appl. Phys. Lett, vol. 54, No. 8, 20 Feb. 1989 pp. 754-755.

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