Field effect transistor having an integrated capacitor

Details Field effect transistor having an integrated capacitor Field effect transistor having an integrated capacitor

1989-08-14

1990-11-27

Hille, Rolf

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 51, 357 55, 307277, H01L 2702, H01L 2906, H01L 2980, H03K 300

Patent

active

049740393

ABSTRACT:
An integrated field effect transistor capacitor structure having a capacitor connected between source and drain electrodes is described. In one embodiment, the capacitor is formed over a drain contact by providing a dielectric over said contact and an airbridge upper plate between said dielectric to the adjacent source contact. Preferably, the capacitor dielectric is the same dielectric as the FET passivation.

REFERENCES:
patent: 4456888 (1984-06-01), Ayasli
patent: 4543535 (1985-09-01), Ayasli
patent: 4751562 (1988-06-01), Yamamura
M. J. Schindler et al., "Monolithic 6-18 GHz 3 Bit Phase Shifter", GaAs IC Symposium, (1985 IEEE), pp. 129-132.

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