Metal working – Method of mechanical manufacture – Assembling or joining
Patent
1980-04-29
1981-12-22
Ozaki, G.
Metal working
Method of mechanical manufacture
Assembling or joining
29591, 148 15, 148187, 357 23, H01L 2126
Patent
active
043063527
ABSTRACT:
A field effect transistor having an extremely short channel length in which a doped semiconductor layer of one conductivity type has oppositely doped source and drain zones in a surface side thereof. A first gate electrode is separated from the semiconductor layer surface by an insulating layer. The first gate electrode covers the region between the source and drain zones with the exception of a strip-like semiconductor region directly adjoining the source zone. A second gate electrode is provided above the strip-like semiconductor region and is insulated from the first gate electrode by a second insulating layer. The first gate electrode is connected to a bias voltage source and the second gate electrode is arranged to be connected to a control voltage.
REFERENCES:
patent: 3454844 (1969-07-01), Dill
patent: 3660697 (1972-05-01), Berglund et al.
patent: 3912545 (1975-10-01), Armstrong
patent: 3996658 (1976-12-01), Takei et al.
patent: 4031608 (1977-06-01), Togei et al.
patent: 4037308 (1977-07-01), Smith
patent: 4084108 (1978-04-01), Fujimoto
patent: 4091278 (1978-05-01), Tchon
IEEE Journal of Solid-State Circuits, vol. SC-10, No. 5, Oct. 1975, pp. 322-331.
Ozaki G.
Siemens Aktiengesellschaft
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