Active solid-state devices (e.g. – transistors – solid-state diode – Non-single crystal – or recrystallized – semiconductor... – Non-single crystal – or recrystallized – material with...
Reexamination Certificate
2006-11-21
2009-10-27
Nguyen, Khiem D (Department: 2823)
Active solid-state devices (e.g., transistors, solid-state diode
Non-single crystal, or recrystallized, semiconductor...
Non-single crystal, or recrystallized, material with...
C257SE21036, C257S021000
Reexamination Certificate
active
07608857
ABSTRACT:
A TFT having a large mobility of carriers that are conducted through a channel as compared with a conventional organic TFT, and a method of manufacturing the TFT inexpensively and easily are provided. The channel is formed of a semiconductor organic molecular crystal thin film which is highly oriented, and a TFT that is large in the mobility of the carriers that are conducted through the channel, and a lyophilic TFT pattern that is surrounded by a lyophobic region on a substrate are formed, and the configuration of the pattern is featured, whereby a solution of the semiconductor organic molecules which is supplied to an appropriate region of a substrate surface including the channel is spontaneously dried in an anisotropic fashion, and highly oriented crystal is grown in the drying process.
REFERENCES:
patent: 7208763 (2007-04-01), Koyama
patent: 2004/0077132 (2004-04-01), Lee
patent: 2006/0110847 (2006-05-01), Fujimori et al.
patent: 2007/0018151 (2007-01-01), Sirringhaus et al.
Vikram C. Sundar et al., “Elastomeric Transistor Stamps: Reversible Probing of Charge Transport in Organic Crystals”, Science, vol. 303, Mar. 12, 2004, pp. 1644-1646.
Oana D. Jurchescu et al., “Effect of Impurities on the Mobility of Single Crystal Pentacene”, Applied Physics Letters, vol. 84, No. 16, Apr. 19, 2004, pp. 3061-3063.
A. R. Brown et al., “Precursor Route Pentacene Metal-Insulator-Semiconductor Field-Effect Transistors”, J. Appl. Phys., vol. 79, N. 4, Feb. 15, 1996, pp. 2136-2138.
Ali Afzali et al., “High-Performance, Solution-Processed Organic Thin Film Transistors from a Novel Pentacene Precursor”, J. Am. Chem. Soc., vol. 124, Apr. 24, 2002, pp. 8812-8813.
Takashi Minakata et al., “Direct formation of Pentacene Thin Films by Solution Process”, Science Direct, Synthetic Metals, vol. 153 (2005), pp. 1-4.
Mika Nagano, et al., “The First Observation of1H-NMR Spectrum of Pentacene”, Japanese Journal of Applied Physics, vol. 43, No. 2B (2003), pp. L315-L316.
Ando Masahiko
Fujimori Masaaki
Hashizume Tomihiro
A. Marquez, Esq. Juan Carlos
Hitachi , Ltd.
Nguyen Khiem D
Stites & Harbison PLLC
LandOfFree
Field effect transistor having a structure in which an... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field effect transistor having a structure in which an..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor having a structure in which an... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-4129581