Field-effect transistor having a semiconductor layer made of an

Active solid-state devices (e.g. – transistors – solid-state diode – Organic semiconductor material

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257 59, 257 72, 349 43, H01L 3524

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active

057058261

ABSTRACT:
A field-effect transistor using a conjugated oligomer having an ionization potential of 4.8 eV or above in the semiconductor layer thereof works stably and has a long life-time and can be used in a liquid crystal display device as a switching element to give excellent contrast and good performances.

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Synthetic Metals, 54, (1993), pp. 435-445 Horowitz et al.
JP-A 4-133351 (Waratani) May 1992.
JP-A 4-164370 (Hosokawa) Jun. 1992.
"Electrical properties of polyacetylene/polysiloxane interface", F. Ebisawa, T. Kurokawa, and S. Nara, J. Appl. Phys. 54(6), Jun. 1993, pp. 3255-3259.
"The First Field Effect Transistor Based On an Intrinsic Molecular Semiconductor", Madru, Guillaud, Sadoun, Maitrot, Clarisse, le Contellec, Andre and Simon; Chemical Physics Letters, vol. 142, No. 1, 2, Dec. 4, 1987.
"An All-Organic Soft Thin Film Transistor With Very High Carrier Mobility", Garnier, Horowitz, Peng and Fichou; Advanced Materials, pp. 592-594, Feb. 1990.

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