Field effect transistor having a linear attenuation characterist

Details Field effect transistor having a linear attenuation characterist Field effect transistor having a linear attenuation characterist

1977-10-26

1979-02-20

Clawson, Jr., Joseph E.

Electrical transmission or interconnection systems

Nonlinear reactor systems

Parametrons

357 41, 357 51, 357 59, 307304, H01L 2978

Patent

active

041410238

ABSTRACT:
A field effect transistor having two electrodes and distributed resistance therebetween is disclosed. This device is used as an attenuator when a main signal is applied across one drain electrode and a source and a control voltage is applied between a gate and the source. The output is derived from the other drain electrode.

REFERENCES:
patent: 3471755 (1969-10-01), Bilotti
patent: 3673471 (1972-06-01), Klein et al.
patent: 3714522 (1973-01-01), Kumiya et al.
patent: 3714523 (1973-01-01), Bate
patent: 3829883 (1974-08-01), Bate
C. Hu et al., "A Resistive-Gated IGFET Tetrode," IEEE Trans. on Elec. Dev., vol. ED-18, #7, Jul. 1971, pp. 418-425.
W. Chang et al., "C-C-D Magnetic Field Sensor," IBM Tech. Discl. Bull., vol. 14, #11, Apr. 1972, p. 3420.
J. Elliott et al., "Self-Limiting Off-Chip Driver," IBM Tech. Discl. Bull., vol. 16, #8, Jan. 1974, pp. 2679, and 2680.

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