Field effect transistor having a gate dielectric with variable t

Details Field effect transistor having a gate dielectric with variable t Field effect transistor having a gate dielectric with variable t

1991-08-26

1994-05-24

Wojciechowicz, Edward

Fishing, trapping, and vermin destroying

437189, 437191, 437192, 437235, 437913, 257324, 257340, 257389, H01L 21265, H01L 2968

Patent

active

053148347

ABSTRACT:
A field effect transistor, FET, (11) having a gate dielectric of varying thickness (14, 24) to improve device performance. The FET (11) is made on a substrate (10) and has a control electrode, or gate (16), and two current electrodes, or source and drain regions (28), which are separated by a channel region. The gate (16) is separated from the channel region by a gate dielectric. The gate dielectric has a centrally located first region that is of a first thickness (14) and a second region which is adjacent a perimeter of the first region that is of a second thickness (24). The second thickness (24) is made greater than the first thickness (14).

REFERENCES:
patent: 5051794 (1991-09-01), Mori

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