Field-effect transistor having a double pulse-doped structure

Details Field-effect transistor having a double pulse-doped structure Field-effect transistor having a double pulse-doped structure

1993-02-26

1995-04-18

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257194, 257 27, H01L 29804, H01L 29812

Patent

active

054081114

ABSTRACT:
A buffer layer, a first undoped layer, a first active layer and second undoped layer, a second active layer, a third undoped layer, a cap layer and contact layers are epitaxially grown on a semiconductor substrate in the stated order. A gate electrode is formed in a recess etched groove which formed in the center and reaches the cap layer through the contact layers. A drain electrode and a source electrode are formed on the contact layers and on both sides of the gate electrode.

REFERENCES:
patent: 4855797 (1989-08-01), Kohn et al.
patent: 5140386 (1992-08-01), Huang et al.
patent: 5285087 (1994-02-01), Narita et al.
"High Efficiency Millimeter Wave GaAs/GaAlAs Power Hemt's " Saunier et al, IEEE electron device letters, vol. EDL-7, No. 9, Sep. 1986.

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