Field-effect transistor having a delta-doped ohmic contact

Details Field-effect transistor having a delta-doped ohmic contact Field-effect transistor having a delta-doped ohmic contact

1986-06-06

1988-10-25

James, Andrew J.

357 22, 357 89, 357 90, 357 71, H01L 2712, H01L 2980, H01L 2348

Patent

active

047807482

ABSTRACT:
A field-effect transistor is created on a GaAs semi-insulating substrate using molecular beam epitaxy by fabricating a delta-doped monolayer with a silicon dopant between two undoped GaAs layers grown over the semi-insulating substrate. A plurality of delta-doped monolayers are grown over the surface of the upper undoped layer interleaved with layers of GaAs having a thickness equal to or less than the tunneling width of electrons in GaAs. A channel is etched through the plurality of delta-doped monolayers to permit a gate electrode to contact the upper undoped GaAs layer. Source and drain electrodes are deposited over the delta-doped monolayers on each side of the channel.

REFERENCES:
patent: 4205329 (1980-05-01), Dingle et al.
patent: 4583110 (1986-04-01), Jackson et al.
"Ohmic Contacts for GaAs Devices", Solid-State Electronics, vol. 10 pp. 1213-1218, R. H. Cox et al., Pergamon Press 1967.
"In situ Ohmic-contact formatioln to n- and p- GaAs by molecular beam epitaxy", App. Phys. Let., 33, 12/15/78, W. T. Tsang, pp. 1022-1025.
"Nonalloyed and in situ ohmic contacts to highly doped n-type GaAs layers grown by molecular beam epitaxy (MBE) for field-effect transistors", J. App. Phy. 50, 2/79, J. V. DiLorenzo et al., pp. 951-954.
"Complex free-carrier profile synthesis by "atomic-plane" doping of MBE GaAs", J. App. Phy. 51, Jan. 1980, C. E. C. Wood, et al. pp. 383-387.
"Low-resistance nonalloyed ohmic contacts to Si-doped molecular beam epitaxial GaAs", App. Phy. Let. 47, 7/1/85, P. D. Kirchner, et al, pp. 26-28.
Radiative electron-hole recombination in a new sawtooth semiconductor superlattice grown by molecular-beam epitaxy", Phys. Rev. B, vol. 32, No. 2, 7/15/85, E. F. Schubert, et al., pp. 1085-1089.
"The Delta-Doped Field-Effect Transistor", Japanese Jnl. App. Phys., vol. 24, No. 8, Aug. 1985, E. F. Schubert, et al., pp. L608-L610.

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