Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Reexamination Certificate
2007-08-02
2009-12-29
Ha, Nathan W (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
C257SE29015
Reexamination Certificate
active
07638824
ABSTRACT:
A field effect transistor includes a pair of ohmic electrodes and an n-type GaAs layer between the pair of ohmic electrodes and having recesses. Crank-shaped gate fingers are located within the recesses of the n-type GaAs layer between the pair of ohmic electrodes, and each crank-shaped gate finger includes perpendicular-extending portions and parallel-extending portions relative to the [0,1,1] crystal orientation of the n-type GaAs layer. The portion of the n-type GaAs layer between the gate fingers continuously extends from input ends of the gate electrodes to terminal ends of the gate electrode. A non-active region is located around each perpendicular-extending portion of the gate fingers.
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patent: 2005/0285144 (2005-12-01), O'Keefe et al.
patent: 2006/0060895 (2006-03-01), Hikita et al.
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patent: 2006-165224 (2006-06-01), None
Ha Nathan W
Leydig , Voit & Mayer, Ltd.
Mitsubishi Electric Corporation
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