Field effect transistor formed with deep-submicron gate

Details Field effect transistor formed with deep-submicron gate Field effect transistor formed with deep-submicron gate

1991-03-25

1993-04-13

Thomas, Tom

Fishing, trapping, and vermin destroying

437 40, 437 41, 437 44, 437228, 437944, H01L 2170

Patent

active

052022722

ABSTRACT:
A method of forming a semiconductor structure comprising the steps of: providing a body of semiconductor material including at least one generally planar surface; forming a mesa having at least one generally vertical wall over the planar surface; forming a layer of material generally conformally over the mesa and the planar surface so as to form a vertical spacer on the vertical wall; forming a protective mask selectively on the upper portion of the vertical spacer; and using the protective mask to etch and remove the unmasked portions of the layer of material and the mesa while leaving the vertical spacer.
The process is used to form an FET by forming a gate insulating layer underneath of the vertical spacer, the vertical spacer being selected to comprise a conductive gate material such as doped polysilicon. The vertical gate structure is then used as a mask to dope the source and drain regions.

REFERENCES:
patent: 4037308 (1977-07-01), Smith
patent: 4312680 (1982-01-01), Hsu
patent: 4419809 (1983-12-01), Riseman et al.
patent: 4502914 (1985-03-01), Trumpp et al.
patent: 4532698 (1985-08-01), Fang et al.
patent: 4729966 (1988-03-01), Koshino et al.
patent: 4803181 (1989-02-01), Buchamann
patent: 4849069 (1989-07-01), Evans et al.
patent: 4851365 (1989-07-01), Jeuch
patent: 4931137 (1990-06-01), Sibuet

Affiliated with

Also associated with

Rating

Field effect transistor formed with deep-submicron gate does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor formed with deep-submicron gate, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor formed with deep-submicron gate will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1155017