Field-effect transistor formed over gate electrode

Details Field-effect transistor formed over gate electrode Field-effect transistor formed over gate electrode

1992-07-20

1994-04-12

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257281, 257284, 257471, H01L 2980, H01L 31112, H01L 27095

Patent

active

053028422

ABSTRACT:
A field-effect transistor in which a metal gate (14) is defined on top of an insulating substrate (12). A free-standing semiconductor thin film (16), obtained by the epitaxial lift-off process, is bonded to both the top of the metal gate and the insulating substrate. Electrodes (20, 22) attached to the top of ends of the semiconductor film complete the transistor.

REFERENCES:
patent: 4317125 (1982-02-01), Hughes et al.
patent: 4846931 (1989-07-01), Gmitter et al.
patent: 5122852 (1992-06-01), Chan et al.
Journal of Applied Physics, vol. 46, No. 7, Jul. 1975, "Ferroelectric field-effet memory device using Bi.sub.4 Ti.sub.3 O.sub.12 film", by Sugibuchi et al. pp. 2877-2882.
J. C. Vokes et al., "Novel Microwave GaAs Field-Effect Transistors," Electronics Letters, 1979, vol. 15, pp. 627-629.
E. Yablonovitch et al., "Van der Waals bonding of GaAs epitaxial liftoff films onto arbitrary substrates," Applied Physics Letters, 1990, vol. 56, pp. 2419-2421.
W. K. Chan et al., "Grafted Semiconductor Optoelectronics," IEEE Journal of Quantum Electronics, 1991, vol. 27, pp. 717-725
W. K. Chan, et al., "Inverted gate GaAs MESFET by epitaxial liftoff," Electronics Letters, 1992, vol. 28, pp. 708-709.

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