Field effect transistor formed in semiconductor region surrounde

Details Field effect transistor formed in semiconductor region surrounde Field effect transistor formed in semiconductor region surrounde

1996-10-02

1998-03-03

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Integrated circuit structure with electrically isolated...

257501, 257502, 257506, 257524, 257347, 257350, H01L 2906

Patent

active

057238952

ABSTRACT:
A field effect semiconductor device includes a first semiconductor region of a first conductive type and a second semiconductor region of a second conductive type provided above the first semiconductor region. A dielectric film is interposed between the first semiconductor region and the second semiconductor region to surround the second semiconductor region and to have at least one opening portion for connecting the second semiconductor region to the first semiconductor region. A field effect transistor is provided, in which a source region is provided in a surface portion of the second semiconductor region and connected to a source electrode and a drain region is provided in the surface portion of the second semiconductor region and connected to a drain electrode. A gate electrode provided between the source region and the drain region to form a channel region. In this case, it is preferred that the drain region, the gate and the source region are provided apart from a portion vertically corresponding to the opening portion.

REFERENCES:
patent: 4300150 (1981-11-01), Colak
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5382818 (1995-01-01), Pein
patent: 5554870 (1996-09-01), Fitch et al.
patent: 5608252 (1997-03-01), Nalato
K.Kobayashi et al., "An Intelligent Power Device Using Poly-Si Sandwiched Wafer Bonding Technique", Proceedings of 1995 International Symposium on Power Semiconductor Devices & ICs, pp. 58-62.

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