Field effect transistor (FET) having wire channels and...

Details Field effect transistor (FET) having wire channels and... Field effect transistor (FET) having wire channels and...

2007-09-25

2007-09-25

Tran, Long K. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257S210000, C257S241000, C257S287000, C257SE29049

Reexamination Certificate

active

11074900

ABSTRACT:
In a field effect transistor (FET), and a method of fabricating the same, the FET includes a semiconductor substrate, source and drain regions formed on the semiconductor substrate, a plurality of wire channels electrically connecting the source and drain regions, the plurality of wire channels being arranged in two columns and at least two rows, and a gate dielectric layer surrounding each of the plurality of wire channels and a gate electrode surrounding the gate dielectric layer and each of the plurality of wire channels.

REFERENCES:
patent: 4996574 (1991-02-01), Shiraski
patent: 5583362 (1996-12-01), Maegawa
patent: 5965914 (1999-10-01), Miyamoto
patent: 6413802 (2002-07-01), Hu et al.
patent: 6583014 (2003-06-01), Wu
patent: 6605847 (2003-08-01), Kim et al.
patent: 2004/0007738 (2004-01-01), Fried et al.
patent: 2004/0063286 (2004-04-01), Kim et al.
patent: 2005/0191795 (2005-09-01), Chidambarrao et al.

Affiliated with

Also associated with

Rating

Field effect transistor (FET) having wire channels and... does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor (FET) having wire channels and..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor (FET) having wire channels and... will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3769299