Field effect transistor (FET) and FET circuitry

Details Field effect transistor (FET) and FET circuitry Field effect transistor (FET) and FET circuitry

2005-02-08

2005-02-08

Flynn, Nathan J. (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S288000, C257S402000

Reexamination Certificate

active

06852995

ABSTRACT:
A polymer-based or silicon-based accumulation type, depletion mode field effect transistor, suitable as a driver for load. Optionally, the load is another accumulation type, depletion mode field effect transistor. The transistor may be of the TFT type, either lateral or vertical. Optionally, it may have Schottky diode contacts to source and drain electrodes, possibly with a reverse biased Schottky junction, or it may have a negatively charged gate dielectric.

REFERENCES:
patent: 4924279 (1990-05-01), Shimbo
patent: 5744823 (1998-04-01), Harkin et al.
patent: 6001680 (1999-12-01), Ishida et al.
patent: 6150668 (2000-11-01), Bao et al.
patent: 411044892 (1999-02-01), None
patent: WO 9954936 (1999-10-01), None
Koch, N., et al, “Conjugated organic molecules on metal versus polymer electrodes: Demonstration of a key energy level alignment mechanism”, Applied Physics Letters, vol. 82, No. 1, Jan. 6, 2003, pp. 70-72.*
“Academic Press Dictionary of Science and Technology”, Ed. C. Morris, Academic Press (New York) 1992, p. 1924 (ISBN 0-1 200400-0).*
“CRC Handbook of Chemistry and Physics”, 81stEdition, Ed. D.R. Lide, CRC Press, Boca Raton (2000), p. 12-197.*
C.D. Dimitrakopoulos et al, “Organic transistors with low operating voltage and high mobility”, in Device Research Digest, Jun. 28-30, 1999, pp. 116-119, Santa Barbara, CA (USA).*
Boa, Z. et al., “Soluble and processable regioregular poly(3-hexylthiophene) for thin film filed-effect transistor applications with high mobility”,Applied Physics Letters,1996, 69(26), 4108-4110, XP-0020596963.
Brown, P.J. et al., “Electro-Optical Characterisation of Filed Effect Devices with Regioregular Poly-Hexylthiophene Active Layers”,Synthetic Metals,1999, 101, 557-560, XP-000934358.
Hattori, R. et al., “A New Type TFT with Unique Operation and Simple Fabrication Process”,Materials Research Society Symposium Proceedings,1994, 345, 217-222, XP-000973842.
Klauk, H. et al., “Pentacene Thin Film Transistors and Inverter Circuits”,IEEE International Electron Devices Meeting,1997, 539-542, XP-000855855.
Klauk, H. et al., “Pentacene Organic Thin-Film Transistors for Circuit and Display Applications”,IEEE Transactions on Electron Devices,1999, 46(6), 1258-1263, XP-002158555.
Klauk, H. et al., “Fast Organic Thin-Film Transistor Circuits”,IEEE Electron Device Letters,1999, 20(6), 289-291, XP-002158556.
Lungu, G. et al., “Thin Film Active Matrix Organic Electroluminescent Display Development”,IEEE,1997, 165-168, XP-000792031.
Nakae, A. et al, “Amorphous Silicon TFT Using Schottky Barrier Contacts for Source and Drain”,Technology Reports of the Osaka University, 1992, 42(2106), 261-267, XP-000973891.
Saitoh, A. et al., “Excimer-Laser-Produced Amorphous-Silicon Vertical Thin-Film Transistors”,Japanese Journal of Applied Physics,1997, 36(6a), L668-L669, Xp-000727771.
Sze, S.M. “Physics of Semiconductor Devices, 2ndEdition”, 1981,John Wiley&Sons, New York, 453-456, XP-002158557.

Affiliated with

Also associated with

Rating

Field effect transistor (FET) and FET circuitry does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor (FET) and FET circuitry, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor (FET) and FET circuitry will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3506103