Field effect transistor controlled thyristor having improved tur

Details Field effect transistor controlled thyristor having improved tur Field effect transistor controlled thyristor having improved tur

1991-12-23

1993-11-09

Jackson, Jerome

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Combined with field effect transistor

257153, 257138, 257341, H01L 2974, H01L 2978

Patent

active

052605906

ABSTRACT:
A composite thyristor comprising a plurality of parallel connected identical thyristor cells, each of the cells including a turn-on field effect transistor (FET) and a turn-off FET. The gate electrodes of all the FETs form a grid-like pattern on a surface of the semiconductor substrate of the device. The pattern includes strips which intersect at corners. Turn-off FETs are formed along the boundary of the grid and beneath it, and turn-on FETs are disposed beneath the corners.

REFERENCES:
patent: 4801986 (1989-01-01), Chang et al.
patent: 4965647 (1990-10-01), Takahashi
patent: 4967244 (1990-10-01), Bauer
patent: 5014102 (1991-05-01), Adler
patent: 5136349 (1992-08-01), Yilmaz
IEEE Trans. Ed. Oct. 1986, Temple, "MOS-Contr. Thyristors . . . " pp. 1609-1618.

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