Field-effect transistor comprising hollow cavity

Details Field-effect transistor comprising hollow cavity Field-effect transistor comprising hollow cavity

2006-03-20

2009-12-15

Smith, Bradley K (Department: 2894)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

C257SE29257, C257SE29201, C257S330000, C257SE29255

Reexamination Certificate

active

07633099

ABSTRACT:
A field-effect transistor has: a substrate having a first cavity; a gate electrode buried in the substrate; and diffusion layers formed in the substrate and being in contact with the first cavity. A channel region is formed substantially perpendicular to a surface of the substrate between the diffusion layers.

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T. Sato et al., “SON (Silicon on Nothing) MOSFET using ESS (Empty Space in Silicon) technique for SoC applications,” IEEE, IEDM 01-809, 37.1.1-37.1.4, 2001, 4 pp.

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