Field effect transistor based sensor

Details Field effect transistor based sensor Field effect transistor based sensor

2009-04-29

2010-11-09

Dang, Trung (Department: 2892)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Responsive to non-optical, non-electrical signal

C257SE29255

Reexamination Certificate

active

07829918

ABSTRACT:
The invention discloses a FET based sensor. The FET based sensor according to an embodiment of the invention includes a substrate, an InN material layer, a source terminal and a drain terminal. The InN material layer is formed over the substrate and has an upper surface. The upper surface thereon provides an analyte sensing region. The InN material layer serves as a current channel between the source terminal and the drain terminal. Thereby, ions adsorbed by the analyte sensing region induce a variation of a current flowing through the current channel, and the variation is further interpreted as a characteristic of the analyte.

REFERENCES:
patent: 5833824 (1998-11-01), Benton
patent: 7361946 (2008-04-01), Johnson et al.
patent: 2008/0203431 (2008-08-01), Garcia et al.

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