Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Charge transfer device
Patent
1999-03-19
2000-12-12
Abraham, Fetsum
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Charge transfer device
257288, 257350, 257368, 257377, 257382, 257383, 257384, 257385, 257457, 257408, 257520, H01L 21336
Patent
active
061602779
ABSTRACT:
A method of forming a field effect transistor relative to a semiconductor substrate, where the transistor has a gate which defines a resultant lateral expense of semiconductive material therebeneath for provision of a transistor channel region, includes a) providing a conductive gate layer over a semiconductor substrate; b) patterning the conductive gate layer into a first gate block, the first gate block having a first lateral expanse which is greater than the resultant lateral expanse; c) providing an insulating dielectric layer over the first gate block; d) providing a patterned layer of photoresist over the first gate block and the insulating dielectric layer, the patterned photoresist comprising a photoresist block positioned over and within the first lateral expanse of the first gate block; e) with the patterned photoresist in place, etching the insulating dielectric layer selectively relative to the first gate block; f) after etching the insulating dielectric layer and with the patterned photoresist in place, etching the first gate block selectively relative to the insulating dielectric layer to define the transistor gate having a second lateral expanse adjacent the substrate which is equal to the resultant lateral expanse; and g) providing a conductivity enhancing impurity into the substrate adjacent the transistor gate. The invention has particular utility in fabrication of field effect transistors having an elevated source and an elevated drain. The invention also contemplates products produced by the above process.
REFERENCES:
patent: 5304829 (1994-04-01), Mori et al.
patent: 5306657 (1994-04-01), Yang
patent: 5314834 (1994-05-01), Mazure et al.
patent: 5331190 (1994-07-01), Shimoji et al.
patent: 5341010 (1994-08-01), Shimoji
patent: 5364807 (1994-11-01), Hwang
patent: 5376578 (1994-12-01), Hsu et al.
patent: 5604367 (1997-02-01), Yang
patent: 5633522 (1997-05-01), Dorleans et al.
patent: 5770485 (1998-06-01), Gardner et al.
patent: 5780327 (1998-07-01), Chu et al.
patent: 5851883 (1998-12-01), Gardner et al.
patent: 5904529 (1999-05-01), Gardner et al.
patent: 5923998 (1999-07-01), Liu
patent: 5924000 (1999-07-01), Linliu
patent: 5945698 (1999-08-01), Prall
Abraham Fetsum
Micro)n Technology, Inc.
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