Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1994-05-18
1995-06-27
Sikes, William L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257280, 257281, 257282, 257283, 257601, 257613, 257910, H01L 2978, H01L 2706, H03F 100
Patent
active
054282322
ABSTRACT:
A dual gate field effect transistor including first and second gates comprises a conductive region, wherein a potential difference between a second gate electrode section and the conductive region is larger than that between the second gate electrode section and a channel operation region.
Aga Keigo
Hika Mitsuhiro
Takakuwa Hidemi
Tanaka Shin-ichi
Abraham Fetsum
Sikes William L.
Sony Corporation
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