Field effect transistor and production process thereof

Details Field effect transistor and production process thereof Field effect transistor and production process thereof

2005-06-09

2009-10-20

Louie, Wai-Sing (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C438S099000

Reexamination Certificate

active

07605392

ABSTRACT:
There is provided a field effect transistor including a substrate, an organic semiconductor layer6, an insulating layer3, and a conductive layers2, 4, and5, wherein the insulating layer3comprises a cured product of a phenol resin represented by the following general formula (1):(R1, R2and R3each represent hydrogen atom, halogen atom, hydroxymethyl group, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, alkoxyl group, alkylthio group, or alkyl ester group, X1and X2each represent hydrogen atom, alkyl group having 1 to 12 carbon atoms, alkenyl group, alkinyl group, or aryl group, and n represents an integer of 0 to 2,000.) According to the present invention, a field effect transistor capable of smoothening the gate electrode having a low surface smoothness, in which a current leak to the gate electrode is small can be obtained.

REFERENCES:
patent: 3857817 (1974-12-01), Henshaw et al.
patent: 6107117 (2000-08-01), Bao et al.
patent: 6586791 (2003-07-01), Lee et al.
patent: 6861377 (2005-03-01), Hirai et al.
patent: 7026231 (2006-04-01), Kubota et al.
patent: 7094625 (2006-08-01), Miura et al.
patent: 7239081 (2007-07-01), Tsutsui
patent: 2004/0026689 (2004-02-01), Bernds et al.
patent: 2004/0075383 (2004-04-01), Endo et al.
patent: 2004/0118520 (2004-06-01), Nakayama et al.
patent: 2004/0129937 (2004-07-01), Hirai
patent: 2004/0131782 (2004-07-01), Hasei et al.
patent: 2005/0001210 (2005-01-01), Lee et al.
patent: 2005/0202348 (2005-09-01), Nakayama et al.
patent: 2005/0205861 (2005-09-01), Bao et al.
patent: 2006/0081880 (2006-04-01), Miyazaki et al.
patent: 2006/0113523 (2006-06-01), Kubota et al.
patent: 2006/0145141 (2006-07-01), Miura et al.
patent: 2006/0214159 (2006-09-01), Nakayama et al.
patent: 10-190001 (1998-07-01), None
patent: 2004-6700 (2004-01-01), None
patent: 2004-63975 (2004-02-01), None
patent: 2004-63977 (2004-02-01), None
patent: 2004-128469 (2004-04-01), None
patent: 2004-146796 (2004-05-01), None
R. Mlica et al, “membranes containing new large size calixarenes on semiconductopr substrates for chemical microsensors”, Mar. 27, 1997, Analytica Chimica Acta (1997), 354 (1-3) 283-289 CODEN: ACACAM; ISSN 0003-2670, first page and pp. 248-289. First page and pp. 284-289 are attached.
A. Assadi, et al., “Field-effect mobility of poly(3-hexylthiophene)”, Appl. Phys. Lett., vol. 53, No. 3, Jul. 18, 1988, pp. 195-197.
Zhenan Bao, et al., “High-Performance Plastic Transistors Fabricated by Printing Techniques”, Chem. Mater., vol. 9, No. 6, 1997, pp. 1299-1301.
H. Fuchigami, et al., “Polythienylenevinylene thin-film transistor with high carrier mobility”, Appl. Phys. Lett., vol. 63, No. 10, Sep. 6, 1993, pp. 1372-1374.
Janos Veres, et al., “Low-kInsulators as the Choice of Dielectrics in Organic Field-Effect Transistors”, Advanced Functional Materials, vol. 13, No. 3, Mar. 2003, pp. 199-204.
Tatsuya Shimoda, et al., “Organic transistor fabricated by ink-jet printing”, Appl. Phys. Lett., vol. 70, 2001, pp. 1452-1456. (with partial translation).
Tatsuya Shimoda, et al., “Organic transistor fabricated by ink-jet printing”, Oyo Buturi, vol. 70, No. 12, 2001, pp. 1452-1456. (with partial translation).

Affiliated with

Also associated with

Rating

Field effect transistor and production process thereof does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor and production process thereof, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor and production process thereof will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-4094283