Field effect transistor and process for the production of a fiel

Details Field effect transistor and process for the production of a fiel Field effect transistor and process for the production of a fiel

1989-11-16

1990-12-18

Hille, Rolf

357 16, 357 71, H01L 2980, H01L 29161, H01L 2348

Patent

active

049790030

ABSTRACT:
In a field effect transistor, nonalloyed ohmic source-drain contacts (7, 8) are made possible, as the channel layer (3) is coated with lanthanide-arsenide which serves as contact-mediating layer and is covered with a very thin, conducting, monocrystalline, epitactic gallium-arsenide layer (10) on which nickel (11) is vaporized, an alloying step being dispensed with.

REFERENCES:
patent: 4186410 (1980-01-01), Cho et al.
patent: 4593301 (1986-06-01), Inata et al.
"First Successful Fabrication of High Performance All Refractory Metal (Tu) GaAs FET Using Very Highly Doped N+ Layers and Nonalloyed Ohmic Contacts", Electronics Letters, 8 May 1986, vol. 22, No. 10, pp. 510-512.
"A New Structure GaAs MESFET with a Selectively Recessed Gate", IEEE Transactions on Electron Devices, vol. ED-31, No. 3, Mar. 1984, pp. 389-390.

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