Semiconductor device manufacturing: process – Having organic semiconductive component
Reexamination Certificate
2006-08-22
2006-08-22
Elms, Richard (Department: 2812)
Semiconductor device manufacturing: process
Having organic semiconductive component
C438S082000, C257SE21400, C257S040000, C257S642000
Reexamination Certificate
active
07094625
ABSTRACT:
A field effect transistor having a high field effect mobility is provided which can be obtained by a simple method. The field effect transistor includes an organic semiconductor layer composed of a crystallized film of a naphthoporphyrin compound represented by formula (2), which is obtained by the conversion by heating of the coating film of a porphyrin compound represented by formula (1), the organic semiconductor layer having crystal grains with a maximum diameter of 1 μm or more, wherein R1and R2each independently denote at least one selected from the group consisting of hydrogen, halogen, hydroxyl, and alkyl having 1 to 12 carbon atoms; R3denotes at least one selected from the group consisting of a hydrogen atom and an aryl group; and M denotes two hydrogen atoms, a metal atom or a metal oxide.
REFERENCES:
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Satoshi Ito, et al., “A new synthesis of [2,3]naphthoporphyrins”, Chem. Commun., XP-002288611, (2000) pp. 893-894.
Miura Daisuke
Nakayama Tomonari
Ahmadi Mohsen
Canon Kabushiki Kaisha
Elms Richard
Fitzpatrick ,Cella, Harper & Scinto
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