Field effect transistor and method of producing the same

Details Field effect transistor and method of producing the same Field effect transistor and method of producing the same

2011-06-14

2011-06-14

Such, Matthew W (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C438S099000, C257SE51006, C257SE51041

Reexamination Certificate

active

07960716

ABSTRACT:
An object of the present invention is to provide a field effect transistor showing high field-effect mobility and a high ON/OFF ratio, which can be produced simply by using a porphyrin compound with excellent crystallinity and orientation. The field effect transistor according to the present invention transistor contains at least an organic semiconductor layer, wherein the organic semiconductor layer contains at least a porphyrin compound and has a maximum diffraction intensity I1in a Bragg angle (2θ) range of 9.9° to 10.4° stronger than a maximum diffraction intensity I2in a Bragg angle (2θ) range of 23.0° to 26.0° in X-ray diffraction using CuKα radiation.

REFERENCES:
patent: 5659181 (1997-08-01), Bridenbaugh et al.
patent: 6531654 (2003-03-01), Sugiyama et al.
patent: 6794275 (2004-09-01), Kondo et al.
patent: 6963120 (2005-11-01), Shiozaki et al.
patent: 7026231 (2006-04-01), Kubota et al.
patent: 7094625 (2006-08-01), Miura et al.
patent: 7140321 (2006-11-01), Nakayama et al.
patent: 2003/0226996 (2003-12-01), Aramaki et al.
patent: 2004/0149330 (2004-08-01), Sugiyama et al.
patent: 2005/0202348 (2005-09-01), Nakayama et al.
patent: 2006/0081880 (2006-04-01), Miyazaki et al.
patent: 2006/0113523 (2006-06-01), Kubota et al.
patent: 2006/0145141 (2006-07-01), Miura et al.
patent: 2006/0214159 (2006-09-01), Nakayama et al.
patent: 2007/0012914 (2007-01-01), Miura et al.
patent: 2007/0051947 (2007-03-01), Nakayama et al.
patent: 2007/0085072 (2007-04-01), Masumoto et al.
patent: 5-55568 (1993-03-01), None
patent: 5-190877 (1993-07-01), None
patent: 8-264805 (1996-10-01), None
patent: 2001-94107 (2001-04-01), None
patent: 2003-304014 (2003-10-01), None
patent: 2004-6750 (2004-01-01), None
patent: WO 2004091001 (2004-10-01), None
Aramaki, S., et al. “Solution-Processible Organic Semiconductor For Transistor Applications: Tetrabenzoporphyrin.” Appl. Phys. Lett., vol. 84, No. 12 (Mar. 22, 2004): pp. 2085-2087.
Bao, Z., et al. “Silsesquioxane Resins as High-Performance Solution Processible Dielectric Materials for Organic Transistor Applications.” Adv. Funct. Mater., vol. 12, No. 8 (Aug. 2002): pp. 526-531.
A. R. Brown, et al., “Precursor route pentacene metal-insulator-semiconductor field-effect transistors”, Journal of Applied Physics, vol. 79, No. 4, Feb. 15, 1996, pp. 2136-2138.
Christos D. Dimitrakopoulos, et al., “Organic Thin Film Transistors for Large Area Electronics”, Advanced Materials, vol. 14, No. 2, Jan. 16, 2002, pp. 99-117.
Peter T. Herwig, et al., “A Soluble Pentacene Precursor: Synthesis, Solid-State Conversion into Pentacene and Application in a Field-Effect Transistor”, Advanced Materials, vol. 11, No. 6, 1999, pp. 480-483.
T. Akiyama, “Synthesis of .pai.-system-expanded compounds using Diels-Alder reactions”, Proceedings of the 81st Annual Spring Meeting of the Chemical Society of Japan, 2002, vol. II, p. 990, 2F9-14. (with translation).

Affiliated with

Also associated with

Rating

Field effect transistor and method of producing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor and method of producing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor and method of producing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2738938