Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1995-10-31
1997-06-17
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257279, 257281, 257282, 257336, 257344, 257408, 257471, 437 16, 437 20, 437 40, 437 44, 437 45, 437141, 437176, 437200, 437228, H01L 2980, H01L 2126
Patent
active
056400292
ABSTRACT:
A field-effect transistor has its gate length made to be minute, and a short channel effect is prevented. The field-effect transistor which attains the above objects has first and second semiconductor regions having different impurity concentrations disposed so as to be adjacent to each other. A source electrode is disposed on the second semiconductor region with a high impurity concentration, a drain electrode on the first semiconductor region with a low impurity concentration, and a gate electrode on the first semiconductor region side of the second semiconductor region. To produce the above field-effect transistor, a production method comprises a step of forming a first semiconductor region on the major surface of a semiconductor substrate, a step of forming a gate electrode to divide the first semiconductor region, and a step of doping impurities in the first semiconductor region on one side of the gate electrode with the gate electrode as the mask, to form a second semiconductor region which is of the same conductive type with the first semiconductor region and has a different impurity concentration from the first semiconductor region.
REFERENCES:
patent: 5036017 (1991-07-01), Noda
"GaAs LSI Process--Device Structure and Process Technology" T. Ohnishi et al., Semiconductor World, Jun. 1987, pp. 86-93 (with English abstract).
"A Self-Aligned Source/Drain Planar Device for GaAs MESFET Integrated Circuits", N. Yokoyama et al., Denshi-Tsushin-Gakkai (Institute of Electronics Communication Engineers of Japan), ED81-14, May 26, 1981, pp. 37-42 (with English abstract).
Toyota Jidosha & Kabushiki Kaisha
Wojciechowicz Edward
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