Field effect transistor and method of manufacturing the same

Details Field effect transistor and method of manufacturing the same Field effect transistor and method of manufacturing the same

2011-01-04

2011-01-04

Lee, Hsien-ming (Department: 2823)

Semiconductor device manufacturing: process

Making device or circuit responsive to nonelectrical signal

Responsive to electromagnetic radiation

C438S099000, C257S040000, C257SE51040, C257SE51005, C257SE51001, C313S499000, C313S506000, C430S200000, C430S201000

Reexamination Certificate

active

07863081

ABSTRACT:
Provided is a field effect transistor having an organic semiconductor layer, in which crystal grains having a maximum diameter of 10 μm or more account for 25% or more of the surface area of the organic semiconductor layer. The organic semiconductor layer preferably contains 7 to 200 crystal grains having a maximum diameter of 10 μm or more per 0.01 mm2. The organic semiconductor layer preferably contains a porphyrin crystal.

REFERENCES:
patent: 5596208 (1997-01-01), Dodabalapur et al.
patent: 6905907 (2005-06-01), Konuma
patent: 7094625 (2006-08-01), Miura et al.
patent: 7193237 (2007-03-01), Aramaki et al.
patent: 7285441 (2007-10-01), Miura et al.
patent: 7394096 (2008-07-01), Miura et al.
patent: 7435989 (2008-10-01), Nakayama et al.
patent: 2001/0015438 (2001-08-01), Callegari et al.
patent: 2005/0202348 (2005-09-01), Nakayama et al.
patent: 2006/0214159 (2006-09-01), Nakayama et al.
patent: 2007/0012914 (2007-01-01), Miura et al.
patent: 2007/0096079 (2007-05-01), Nakayama et al.
patent: 2008/0277649 (2008-11-01), Masumoto et al.
patent: 0 716 459 (1996-06-01), None
patent: 0 716 459 (1996-06-01), None
patent: 5-110069 (1993-04-01), None
patent: 5-152560 (1993-06-01), None
patent: 8-228034 (1996-09-01), None
patent: 2000-269515 (2000-09-01), None
patent: 2003-304014 (2003-10-01), None
patent: 2004-6750 (2004-01-01), None
patent: 2004-323376 (2004-11-01), None
PCT Notification of Transmittal of International Preliminary Report on Patentability (PCT RULE 71.1), date mailed Dec. 20, 2005 of International Application No. PCT/JP2004/012684. (Form PCT/IPEA/416).
PCT International Preliminary Report on Patentability (PCT Article 36 Rule 70) date mailed Dec. 21, 2005 of International Application No. PCT/JP2004/012684. (Form PCT/IPEA/416).
H. Sirringhaus et al., “Two-Dimensional Charge Transport in Self-Organized, High-Mobility Conjugated Polymers,” 401 Nature 685-687 (Oct. 1999).
Peter T. Herwig et al., “A Soluble Pentacene Precursor: Synthesis, Solid-State Conversion into Pentacene and Application in a Field-Effect Transistor,” 11 Advanced Materials 480-483 (1999).
Uno, et al., “Synthesis of Conjugation-expanded Porphyrins Based on the Retro Diels-Alder Reaction”, Journal of Synthetic Organic Chemistry, vol. 60, No. 6, Jun. 2002, pp. 581-592.

Affiliated with

Also associated with

Rating

Field effect transistor and method of manufacturing the same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor and method of manufacturing the same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor and method of manufacturing the same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2691774