Field-effect transistor and method of manufacturing the same

Details Field-effect transistor and method of manufacturing the same Field-effect transistor and method of manufacturing the same

1995-08-21

1996-12-17

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257283, 257284, 257194, H01L 2980

Patent

active

055856551

ABSTRACT:
On a semi-insulating substrate is formed a conductive layer and an undoped layer. On specified regions of the conductive layer are formed ohmic electrodes, each serving as a source electrode or a drain electrode, via a pair of square contact regions. The circumferential edges of the contact regions are undercut beneath the ohmic electrodes. Between the pair of contact regions on the conductive layer is formed a gate electrode by self alignment using the ohmic electrodes as a mask. The gate electrode has extended in the direction of gate width and the extended portion serves as a withdrawn portion of the gate electrode. Upper electrodes are formed by self alignment in the same process in which the gate electrode is formed.

REFERENCES:
patent: 3855690 (1974-12-01), Kim et al.
patent: 4004341 (1977-01-01), Tung
patent: 4325181 (1982-04-01), Yoder

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