Field effect transistor and method of manufacturing the same

Details Field effect transistor and method of manufacturing the same Field effect transistor and method of manufacturing the same

1994-02-17

1996-02-20

Prenty, Mark V.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257194, 257285, 257401, 257657, H01L 2980

Patent

active

054931363

ABSTRACT:
This invention provides a high-speed FET with a sufficiently high output current, and an FET having a high mobility of channel electrons and a high electron saturation rate. For this purpose, in this invention, a buffer layer, a first channel layer, a first spacer layer, a second channel layer, a second spacer layer, a third channel layer, and a capping layer are sequentially epitaxially grown on a semi-insulating GaAs semiconductor substrate. Drain and source regions are formed, and a gate electrode is formed to Schottky-contact the capping layer. Drain and source electrodes are formed to ohmic-contact the drain and source regions. Extension of a surface depletion layer from the substrate surface to a deep portion is prevented by the third channel layer closest to the substrate surface. For this reason, a sufficient quantity of electrons for forming a current channel are assured by the second and first channel layers.

REFERENCES:
patent: 4163984 (1979-08-01), Pucel
"A 760mS/mm N+Self-Aligned Enhancement Mode Doped-Channel Mis-Like FET (DMT)", H. Hida et al., 1986 IEEE, p. 759.
R. B. Beall et al., "Post-growth Diffusion Of Si in .delta.-doped GaAs Grown By MBE", Semiconductor Science and Technology, 4 (1989), pp. 1171-1175.
Z. Abid et al., "GaAs MESFETs With Channel-Doping Variations", Solid-State Electronics 34, No. 12, Dec. (1991), pp. 1427-1432.
K. Ploog et al., "The Use Of Si And Be Impurities For Novel Periodic Doping Structures In GaAs Grown By Molecular Beam Epitaxy", Solid-State Science And Technology, vol. 128, No. 2, Feb. (1981), pp. 400-410.

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