Field effect transistor and method of manufacturing the same

Details Field effect transistor and method of manufacturing the same Field effect transistor and method of manufacturing the same

2007-10-23

2007-10-23

Baumeister, B. William (Department: 2891)

Semiconductor device manufacturing: process

Having organic semiconductive component

C257SE51042

Reexamination Certificate

active

10545398

ABSTRACT:
Provided is a field effect transistor having an organic semiconductor layer, in which the organic semiconductor layer contains at least a tetrabenzo copper porphyrin crystal and has peaks at two or more of Bragg angles (2θ) in CuKα X-ray diffraction of 8.4°±0.2°, 10.2°±0.2°, 11.8°±0.2°, and 16.9°±0.2°, and the tetrabenzo copper porphyrin crystal comprises a compound represented by the following general formula (1): (Wherein R2's each represent a hydrogen atom, a halogen atom, a hydroxyl group, or an alkyl group, oxyalkyl group, thioalkyl group, or alkylester group having 1 to 12 carbon atoms, and R3's each represent a hydrogen atom or an aryl group.)

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