Field effect transistor and method of manufacturing the same

Details Field effect transistor and method of manufacturing the same Field effect transistor and method of manufacturing the same

1998-06-10

2000-03-07

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257286, H01L 2974

Patent

active

060343869

ABSTRACT:
A field effect transistor includes a semiconductor substrate, a channel layer, a superlattice layer having a structure of at least one quantum barrier layer of which an electron affinity is smaller than that of the channel layer and at least one quantum well layer where a resonant level of electron is generated, and an un-doped semiconductor layer, wherein these layers are formed on the semiconductor substrate in order, wherein a source electrode and a drain electrode are formed on the channel layer to be electrically connected to the channel layer, and wherein a gate electrode is formed on the un-doped semiconductor layer to have a Schottky contact.

REFERENCES:
patent: 5483089 (1996-01-01), Terazono
"Negative Transconductance Resonant Tunneling Field-Effect Transistor" Capasso et al. Appl. Phys. Lett 51(7), Aug. 17, 1987; pp. 526-528.

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