Field-effect transistor and method of making the same

Details Field-effect transistor and method of making the same Field-effect transistor and method of making the same

1973-01-29

1976-10-26

Lynch, Michael J.

357 23, 357 46, H01L 2702

Patent

active

039887618

ABSTRACT:
A dual gate field-effect transistor with two diffusion regions of the same conductivity type and a semi-conductive layer of the opposite conductivity type. Each of the diffusion regions has a second diffusion region thereon of the opposite conductivity type diffused at least partly through the same mask to create narrow, controlled channels but with one of the upper diffused regions extending over the edge of the diffused regions below it. The other upper diffused region has an ohmic contact and serves as a source. Two other ohmic contacts are placed on the metal deposited on thin insulating layers directly over edge parts of the first diffused regions to serve as first and second gate electrodes. Another semi-conductive portion, which may be a diffused region of the other conductivity, has an ohmic contact and serves as a drain.

REFERENCES:
patent: 3455020 (1969-07-01), Dawson et al.
patent: 3631310 (1971-12-01), Das
patent: 3653978 (1972-04-01), Robinson et al.
patent: 3667115 (1972-06-01), Barson et al.
patent: 3711940 (1973-01-01), Allison et al.
Y. Tarui et al., "Diffusion Self-Aligned Most And Lateral Trans.," Vortrag Zum 4, Mikroelektronik-Kongreb in Munich, Nov. 1970, pp. 102-128.

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