Field effect transistor and method of fabricating the same

Details Field effect transistor and method of fabricating the same Field effect transistor and method of fabricating the same

2004-07-13

2010-12-28

Nguyen, Cuong Q (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Organic semiconductor material

C257S072000

Reexamination Certificate

active

07858968

ABSTRACT:
A field effect transistor according to the present invention has a semiconductor layer through which carriers injected from a source region travel toward a drain region, the semiconductor layer being formed from a composite material including an organic semiconductor material and nanotubes. The nanotubes may be nanotubes including plural ones joined with each other.

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Japanese Office Action issued in Japanese Patent Application No. JP 2005-511874 dated Sep. 29, 2009.

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