Field effect transistor and method of construction thereof

Details Field effect transistor and method of construction thereof Field effect transistor and method of construction thereof

1976-06-23

1978-05-09

Tupman, W.

Metal working

Method of mechanical manufacture

Assembling or joining

29578, 357 91, B01J 1734

Patent

active

040879020

ABSTRACT:
A field effect transistor and method of making the same wherein a semi-conductor layer is placed on an insulating substrate, and wherein the gate region is separated from source and drain regions of a like conductivity type to that of the source and drain regions but of reduced conductivity, the gate electrode and gate region of the layer being of generally reduced length, and the gate region being of greatest length on its surface closest to the gate electrode. This is accomplished by initially creating a relatively large gate region of one polarity, and then reversing the polarity of a central portion of this gate region by ion bombardment, thus achieving a narrower final gate region of the stated configuration.

REFERENCES:
patent: 3481030 (1969-12-01), TeVelde
patent: 3679492 (1972-07-01), Fang
patent: 3752711 (1973-08-01), Kooi
patent: 4033026 (1977-07-01), Pashley

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