Field effect transistor and method for producing the field effec

Details Field effect transistor and method for producing the field effec Field effect transistor and method for producing the field effec

1993-09-01

1995-11-28

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Controlled by nonelectrical, nonoptical external signal

257254, 257280, 257284, 257412, 257473, 437 40, 437 44, 437176, 437203, 437228, 437235, H01L 2948, H01L 21265

Patent

active

054710731

ABSTRACT:
In a field effect transistor including a Schottky gate electrode disposed on an active region in a compound semiconductor substrate, a compressive stress of the gate electrode and a tensile stress of an insulating film serving as a passivation are concentrated on the lower edges of the gate electrode, whereby positive piezoelectric charges are produced in the compound semiconductor substrate in the vicinity of the gate electrode. The positive piezoelectric charges increase the effective donor concentration, reducing the thickness of the surface depletion layer. As the result, channel narrowing due to the surface depletion layer is suppressed.

REFERENCES:
Zhao, "Modeling The Effects Of Surface States On DLTS Spectra of GaAs MESFET's", IEEE Transactions on Electron Devices, vol. 37, No. 5, May 1990, pp. 1235-1244.
Yeats et al., "Gate Slow Transients In GaAs MESFETs--Causes, Cures, And Impact On Circuits", IEEE pp. 842-845.
Takahashi et al., "Step-Recessed Gate Structure With An Undoped Surface Layer For Microwave And Millimeter-Weave High Power, High Efficiency GaAs MESFETs", IEICE Transactions, vol. E 74, No. 12, Dec. 1991, pp. 4141-4146.

Affiliated with

Also associated with

Rating

Field effect transistor and method for producing the field effec does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor and method for producing the field effec, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor and method for producing the field effec will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2015407