Field-effect transistor and method for manufacturing the same

Details Field-effect transistor and method for manufacturing the same Field-effect transistor and method for manufacturing the same

2008-07-03

2010-06-15

Fahmy, Wael (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S066000, C257SE21413, C438S158000, C438S161000

Reexamination Certificate

active

07737438

ABSTRACT:
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

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K. Nomura et al., “Room-temperature fabrication of transparent flexible thin-film transistors using amorphous oxide semiconductors” Nature 432, Nov. 2004, pp. 488-492.

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