Field-effect transistor and method for manufacturing the same

Details Field-effect transistor and method for manufacturing the same Field-effect transistor and method for manufacturing the same

2007-09-07

2008-08-12

Pert, Evan (Department: 2826)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S288000, C257S347000, C257S368000, C257SE27116, C257SE29068, C257SE29079, C257SE29105, C257SE29109, C438S151000, C438S158000, C438S161000

Reexamination Certificate

active

07411209

ABSTRACT:
A method for manufacturing a field-effect transistor includes the steps of forming a source electrode and a drain electrode each containing hydrogen or deuterium; forming an oxide semiconductor layer in which the electrical resistance is decreased if hydrogen or deuterium is added; and, causing hydrogen or deuterium to diffuse from the source electrode and the drain electrode to the oxide semiconductor layer.

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