Field effect transistor and method for manufacturing the same

Details Field effect transistor and method for manufacturing the same Field effect transistor and method for manufacturing the same

1992-12-14

1994-10-04

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Specified wide band gap semiconductor material other than...

257192, 257194, 257200, 257201, 257283, 257284, 257621, 437 40, 437104, 437203, 437228, 437912, H01L 29161, H01L 21265

Patent

active

053529090

ABSTRACT:
A field-effect transistor of a recessed structure having an etch stopper layer is disclosed. The etch stopper layer is composed of gallium phosphide or aluminium arsenide. The etch stopper layer protects an underlying semiconductor active layer of a metal-semiconductor field-effect transistor or an underlying donor layer of a two-dimensional electron gas field-effect transistor during etching the cap layer for forming a recess receiving a gate electrode. In case of etch stopper layer of aluminium arsenide, the etch stopper layer can be etched by ultrapure water.

REFERENCES:
patent: 5021857 (1991-06-01), Suehiro
patent: 5023675 (1991-06-01), Ishikawa
"Defects in Epitaxial Multilayers" by J. W. Matthews and A. E. Blakeslee, Journal of Crystal Growth 27 (1974), pp. 118-125, Dec. 1974.

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