Field effect transistor and method for making same

Details Field effect transistor and method for making same Field effect transistor and method for making same

1988-12-22

1992-03-31

Wojciechowicz, Edward J.

357 16, 357 22, H01L 2948

Patent

active

051012456

ABSTRACT:
A field effect transistor including a semi-insulating semiconductor substrate, a first conductivity type semiconductor layer disposed on the substrate and forming a heterojunction with the substrate, second conductivity type spaced apart source and drain regions extending through the layer into the substrate, a metallic gate disposed on the layer between the source and drain regions, and a second conductivity type channel disposed in the substrate extending between the source and drain regions and forming a pn heterojunction with the layer for reducing leakage current from the channel to the gate. The second conductivity type channel is produced by ion implantation, and the implantation conditions are controlled as a mechanism for controllably establishing a threshold voltage for the field effect transistor.

REFERENCES:
patent: 4590502 (1986-05-01), Morkoc
patent: 4839703 (1989-06-01), Ohata et al.
"A High-Current Drivability i-AlGaAs
-GaAs Doped-Channel MIS-Like FET (DMT)", by Hida et al., IEEE Electron Device Letters, vol. EDL-7, No. 11, Nov. 1986.

Affiliated with

Also associated with

Rating

Field effect transistor and method for making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistor and method for making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistor and method for making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-2262867