Field effect transistor and manufacturing method therefor

Details Field effect transistor and manufacturing method therefor Field effect transistor and manufacturing method therefor

2005-05-24

2005-05-24

Lebentritt, Michael (Department: 2824)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S192000, C257S194000, C257S197000

Reexamination Certificate

active

06897495

ABSTRACT:
GaN-based FET has a sapphire substrate of about 50 nm thick on which an n-type GaN electron transit layer and an Al0.2Gao0.8N electron supply layer are formed, together with n+-type GaN contact regions sandwiching the electron transit and supply layers therebetween. On the entire faces of these layer and regions is formed a polyimide interlayer insulating film of about 3000 nm thick that is formed with contact holes in which source, drain and gate electrodes are formed, each of which is comprised of a TaSi/Au layer and about 5000 nm in thickness. The source and drain electrodes are ohmic-connected to the n+-type GaN contact regions and the gate electrode is in contact with an SiO2gate insulating film.

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