Field-effect transistor, and integrated circuit device and...

Details Field-effect transistor, and integrated circuit device and... Field-effect transistor, and integrated circuit device and...

2005-08-23

2005-08-23

Ngô, Ngân V. (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

C257S190000

Reexamination Certificate

active

06933542

ABSTRACT:
A channel layer made of undoped InGaAs, a carrier supply layer made of n-type AlGaAs, a Schottky layer made of disordered InGaP without a natural superlattice structure, and a cap layer made of GaAs are successively stacked on a compound semiconductor substrate. A gate electrode is formed on a part of the Schottky layer exposed at the opening of the cap layer. Source and dram electrodes are formed on the cap layer. The thickness of the Schottky layer is set at about 8 nm or less. As a result, the reverse breakdown voltage of the gate electrode becomes larger than that in the case of a Schottky layer made of AlGaAs.

REFERENCES:
patent: 5952672 (1999-09-01), Kikkawa
patent: 6294802 (2001-09-01), Unozawa
patent: 63-228763 (1988-09-01), None
patent: 11-243058 (1999-09-01), None
patent: P2000-31467 (2000-01-01), None
patent: 2003-68764 (2003-03-01), None

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