Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Junction field effect transistor
Patent
1998-03-10
2000-03-14
Guay, John
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Junction field effect transistor
257285, H01L 29812
Patent
active
060376198
ABSTRACT:
A field effect transistor comprises: a first conductive type active layer formed on a surface region of a semiconductor substrate; first conductive type, source and drain regions formed on the semiconductor substrate on both sides of the gate electrode, the source and drain regions having a higher density of impurity than that of the active layer; and first conductive type, first and second impurity regions formed on the semiconductor substrate between a channel region below the gate electrode and the source region and between the channel region and the drain region, the first and second impurity regions having a depth, which is substantially the same as or deeper than that of those of the source region and the drain region, the first and second impurity regions having a density of impurity, which is higher than that of the channel region and lower than those of source region and the drain region. Thus, it is possible to provide a field effect transistor having a high power conversion efficiency, and it is possible to increase the drain efficiency and the yield as high as possible.
REFERENCES:
patent: 4803526 (1989-02-01), Terada et al.
patent: 5883396 (1999-03-01), Reedy et al.
Hirose, et al., "A Lightly Doped Deep Drain GaAs MESFET Structure for Linear Amplifiers of Personal Handy-Phone Systems," IEEEE Trans. on Electron Devices, vol. 43, No. 12, Dec. 1996, pp. 2062-2067.
Kitaura Yoshiaki
Morizuka Mayumi
Guay John
Kabushiki Kaisha Toshiba
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