Field-effect transistor and fabrication method thereof and image

Details Field-effect transistor and fabrication method thereof and image Field-effect transistor and fabrication method thereof and image

1997-03-26

2000-05-30

Meier, Stephen D.

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Amorphous semiconductor material

257 57, 257 58, H01L 2904, H01L 31036, H01L 310376, H01L 3120

Patent

active

060693703

ABSTRACT:
An amorphous silicon thin film transistor for active matrix liquid crystal displays according to the present invention comprises a transparent conductive film, which is formed together with a picture element electrode, a metal film, which is formed together with a signal wiring, a multi-layer film, and an insulation substrate. The multi-layer film, which consists of a semi-conductor film, a gate insulation film and a gate metal film, is placed on the transparent conductive film and metal film overlapping respectively at both edges of the multi-layer film.

REFERENCES:
patent: 5784042 (1998-07-01), Ono et al.
patent: 5847720 (1998-12-01), Dunand
patent: 5847780 (1998-12-01), Kim et al.

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