Field effect transistor

Details Field effect transistor Field effect transistor

2007-01-02

2007-01-02

Smith, Zandra V. (Department: 2822)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

Reexamination Certificate

active

10618717

ABSTRACT:
A field-effect transistor includes a channel layer that is formed on a predetermined semiconductor layer and has an impurity concentration varying from a low value to a high value, and a source region and a drain region each having a bottom face above the predetermined semiconductor layer.

REFERENCES:
patent: 4641161 (1987-02-01), Kim et al.
patent: 5493136 (1996-02-01), Matsuzaki et al.
patent: 6333523 (2001-12-01), Sakamoto et al.
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patent: 1-143270 (1989-06-01), None
patent: 5-74813 (1993-03-01), None
patent: 6-310535 (1994-11-01), None
patent: 7-249780 (1995-09-01), None
patent: 2002-176169 (2002-06-01), None
Japanese Office Action dated Dec. 14, 2004.

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