Field effect transistor

Active solid-state devices (e.g. – transistors – solid-state diode – With means to control surface effects – Insulating coating

Reexamination Certificate

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Details

C257S040000, C438S082000, C438S912000

Reexamination Certificate

active

11045157

ABSTRACT:
A field effect transistor comprising, as provided on a support substrate, an insulation layer, a gate electrode and an organic semiconductor layer separated by the insulation layer, a source electrode and a drain electrode provided so as to contact the organic semiconductor layer, wherein elongation ε1(%) at the yield point of the insulation layer is larger than elongation ε2(%) at the yield point of the support substrate.

REFERENCES:
patent: 5342468 (1994-08-01), Kawazoe et al.
patent: 5347144 (1994-09-01), Garnier et al.
patent: 5854139 (1998-12-01), Aratani et al.
patent: 6433359 (2002-08-01), Kelley et al.
patent: 2002/0195604 (2002-12-01), Segawa et al.
patent: 61-202469 (1986-09-01), None
patent: 8-18125 (1996-01-01), None
patent: 2984370 (1999-09-01), None
patent: 2001-94107 (2001-04-01), None
patent: 2001-244467 (2001-09-01), None
John A. Rogers, et al.,Paper-Like Electronic Displays: Large-Area Rubber-Stamped Plastic Sheets of Electronics and Microencapsulated Electrophoretic Inks, PNAS Apr. 24, 2001. vol. 98, No. 9, pp. 4835-4840, www.pnas.org/cgi/doi/10.1073/pnas.091588098.

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