Field effect transistor

Details Field effect transistor Field effect transistor

2006-11-28

2006-11-28

Pham, Hoai (Department: 2814)

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

C257S027000

Reexamination Certificate

active

07141816

ABSTRACT:
A field effect transistor comprises, at least, a channel forming region formed in a semiconductor layer, and a gate electrode provided in face-to-face relation with the channel forming region via a gate insulating film, wherein the semiconductor layer is made of a mixture of a semiconductor material layer and conductive particles. The field effect transistor is capable of enhancing a carrier mobility.

REFERENCES:
patent: 5731598 (1998-03-01), Kado et al.
patent: 5856681 (1999-01-01), Ohshima
patent: 6358437 (2002-03-01), Jonas et al.
patent: WO 01/99208 (2001-12-01), None
patent: WO 02/071496 (2002-09-01), None
patent: WO 03/023954 (2003-04-01), None
patent: WO 2004/001855 (2003-12-01), None

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