Field effect transistor

Details Field effect transistor Field effect transistor

1993-10-28

1995-06-27

Hille, Rolf

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Heterojunction

257 14, 257 24, 257280, 257282, 257283, H01L 29161, H01L 29205

Patent

active

054282241

ABSTRACT:
A field effect transistor with improved operation speed and reduced noise includes a drain electrode disposed on a channel layer with a contact layer interposed therebetween, a source electrode, and a gate electrode disposed between the drain and source electrodes. A resonant tunneling diode is disposed between the source electrode and the channel region for supplying hot electrons to the channel layer beneath the gate electrode.

REFERENCES:
patent: 4825264 (1989-04-01), Inata et al.
patent: 5111255 (1992-05-01), Kiely et al.
patent: 5162877 (1992-11-01), Mori
"Resonant tunneling transistor with quantum well base and high-energy injection: A new negative differential resistance device", by Federico Capasso and Richard A. Kiehl; J. Appl. Phy. 58(3), pp. 1366-1368; 1 Aug. 1985.
"Resonant-Tunnelling Hot-Electron Transistor (RHET) Using a GaInAs/(AlGa) InAs Heterostructure" by K. Imamura et al.; Electronics Letters; vol. 23, No. 17, pp. 870-871; 13 Aug. 1987.

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